triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information june 18th, 2002 1 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. 17 - 27 ghz high power amplifier TGA4502-EPU key features ? 0.25 um phemt technology ? 22 db nominal gain ? 29 dbm nominal p1db ? 37dbm nominal otoi ? 15 db nominal return loss ? bias 7v @ 750 ma ? chip dimensions 1.5 x 3.3 x .1mm primary applications ? k band sat-com ? point-to-point radio ? point-to-multipoint communications preliminary measured performance bias conditions: vd = 7v, id = 750ma chip dimensions 1.5 mm x 3.3 mm x .1mm 0 5 10 15 20 25 30 14 16 18 20 22 24 26 28 30 32 frequency (ghz) gain (db) 25 27 29 31 33 35 17 18 19 20 21 22 23 24 25 26 27 frequency (ghz) p1db & psat (dbm) p1db psat -30 -25 -20 -15 -10 -5 0 14 16 18 20 22 24 26 28 30 32 frequency (ghz) input return loss (db) -50 -40 -30 -20 -10 0 14 16 18 20 22 24 26 28 30 32 frequency (ghz) output return loss (db)
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information june 18th, 2002 2 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGA4502-EPU table i maximum ratings 5/ symbol parameter value notes v + positive supply voltage 8 v 4/ v - negative supply voltage range -5v to 0v i + positive supply current 880 ma 4/ | i g | gate supply current 28 ma p in input continuous wave power 26 dbm p d power dissipation tbd 3/ 4/ t ch operating channel temperature 150 0 c1/ 2 / t m mounting temperature (30 seconds) 320 0 c t stg storage temperature -65 to 150 0 c 1/ these ratings apply to each individual fet. 2/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. 3/ when operated at this power dissipation with a base plate temperature of 70 0 c, the median life is reduced from tbd to tbd hours. 4/ current is defined under no rf drive conditions. under rf drive, the supply current may rise to 1100 ma without damage. combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 5/ these ratings represent the maximum operable values for this device.
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information june 18th, 2002 3 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. table ii dc probe test (ta = 25 c 5 c) symbol parameter minimum maximum unit i dss1 saturated drain current 60 282 ma g m transconductance 132 318 ms v p1,2 pinch-off voltage -1.5 -0.5 v v p3-6 pinch-off voltage -1.5 -0.5 v v p6-10 pinch-off voltage -1.5 -0.5 v v bvgs1 breakdown voltage gate-source -30 -13 v TGA4502-EPU table iii rf characteristics (t a = 25 c 5 c) vd = 7v, i = 750 ma symbol parameter test condition typical units gain small signal gain f = 17 C 18 ghz f = 20 C 24 ghz f = 27 ghz 22 23 20 db irl input return loss f = 17 C 27 ghz -20 db orl output return loss f = 17 C 27 ghz -15 db p 1db output power @ 1db gain compression f = 17 C 27 ghz 30 dbm otoi output third order intercept f = 18 C 27 ghz 37 dbm
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information june 18th, 2002 4 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGA4502-EPU measured fixtured data bias conditions: vd = 7v, id = 750ma 34 35 36 37 38 39 40 18 20 22 24 26 frequency (ghz) otoi (dbm) 0 10 20 30 40 50 60 70 10 12 14 16 18 20 22 24 26 pout/tone (dbm) imd3 & imd5 (dbc) imd5 @ 22ghz imd3 @ 22ghz
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information june 18th, 2002 5 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. TGA4502-EPU measured fixtured data bias conditions: vd = 7v, id = 750ma at frequency: 18ghz 0 5 10 15 20 25 30 -15 -10 -5 0 5 10 pin (dbm) pout/tone (dbm) -70 -55 -40 -25 -10 5 20 imd3 & imd5 (dbm) single tone power imd3 imd5 at frequency: 20ghz 0 5 10 15 20 25 30 -15 -10 -5 0 5 10 pin (dbm) pout/tone (dbm) -70 -55 -40 -25 -10 5 20 imd3 & imd5 (dbm) single tone power imd3 imd5 at frequency: 24ghz 0 5 10 15 20 25 30 -15 -10 -5 0 5 10 pin (dbm) pout/tone (dbm) - 70 -55 -40 -25 -10 5 20 imd3 & imd5 (dbm) single tone power imd3 imd5 at frequency: 26ghz 0 5 10 15 20 25 30 -15 -10 -5 0 5 10 pin (dbm) pout/tone (dbm) -70 -55 -40 -25 -10 5 20 imd3 & imd5 (dbm ) single tone power imd3 imd5
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information june 18th, 2002 6 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. notes: 1. connection to power det, ref diode not shown. 2. 0.1 m f cap on gate, drain lines not shown but required. 3. for high power operation, gate voltage is recommended from both sides. 4. drain voltage is required from both sides for id > 780ma. output tfn 100pf 100pf vg input tfn 100pf vd vd 100pf vg (one side optional) 0.01 m f dq cap (opt.) TGA4502-EPU gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. recommended assembly diagram
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information june 18th, 2002 7 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. tga4502 built-in power detector on-chip diode functions as envelope detector external coupler and dc bias required external coupler (-20db) tga4502 50 w c=2pf video out (v det ) 10k w external dc bias rf out rf out v bias 100pf 100pf tga4502 with external test coupler (amplifier bias connections not shown) v det rf in rf out TGA4502-EPU tga4502 measured detector voltage offset vs output power with 20db coupler: vb=0.8v, f = 20ghz, coupler loss is uncalibrated, 10k w load 0.01 0.1 1 10 8 101214161820222426283032 pout (dbm) detector voltage (v)
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information june 18th, 2002 8 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. mechanical drawing 1.898 (180x100 m m) TGA4502-EPU 1.898 ( 180x100 m m) 0.000 0.686 0.000 0.612 0.875 0.833 ( 175x100 m m) 0.220 3.136 0.098 2.952 0.373 1.480 3.286 0.612 0.875 0.095 3.136 1.262 1.262 1 8 3 45 6 7 2 9 10 11 12 13 14 15 bond pad #1 (rf input) 200 x 100 m m bond pad #2 (rf output) 200 x 100 m m bond pad #3 vg2 105 x 105 m m bond pad #4 dq 105 x 105 m m bond pad #5 vg3 105 x 105 m m bond pad #6 vd3 180 x 100 m m bond pad #7 det out 105 x 105 m m bond pad #8 pwr det 175 x 100 m m bond pad #8 pwr det 175 x 100 m m bond pad #9 ref2 105 x 105 m m bond pad #10 ref1 105 x 105 m m bond pad #11 vd3 180 x 100 m m bond pad #12 vg3 105 x 105 m m bond pad #13 dq 105 x 105 m m bond pad #14 vg2 105 x 105 m m bond pad #15 ref3 105 x 105 m m units: millimeters (inches) thickness: 0.1016 (0.004) (reference only) chip edge to bond pad dimensions are shown to center of bond pad chip size tolerance +/- 0.051 (0.002) gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test.
triquint semiconductor texas: phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information june 18th, 2002 9 note: devices designated as epu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications are subject to change without notice. assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA4502-EPU reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 ? c. an alloy station or conveyor furnace with reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. discrete fet devices with small pad sizes should be bonded with 0.0007-inch wire. maximum stage temperature is 200 ? c.
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